MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Collector Characteristics
(M54522FP)
500
500
Duty-Cycle-Collector Characteristics
(M54522FP)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
10
5
7
5
3
2
V
CE
= 4V
Ta = 25°C
Duty cycle (%)
Grounded Emitter Transfer Characteristics
400
V
CE
= 4V
DC amplification factor h
FE
Collector current Ic (mA)
300
10
4
7
5
3
2
Ta = 75°C
200
Ta = 75°C
10
3
7
5
3
2
Ta = –20°C
100
Ta = 25°C
Ta = –20°C
10
2
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
Collector current Ic (mA)
0
0
1
2
3
4
Input voltage V
I
(V)
Input Characteristics
2.0
Forward bias current I
F
(mA)
400
Clamping Diode Characteristics
Input current I
I
(mA)
1.5
Ta = –20°C
300
1.0
Ta = 25°C
Ta = 75°C
200
0.5
100
Ta = 75°C
Ta = 25°C
Ta = –20°C
0
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
Input voltage V
I
(V)
Forward bias voltage V
F
(V)
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
