MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
V
O
Output voltage
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
min
0
Limits
typ
—
—
—
—
—
max
50
1.25
Unit
V
I
C
Duty Cycle
P : no more than 4%
FP : no more than 2%
Duty Cycle
P : no more than 18%
FP : no more than 9%
0
0
3
0
A
0.7
6
0.4
V
V
V
IH
V
IL
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) CEO
V
CE (sat)
I
I
I
R
V
F
h
FE
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Test conditions
I
CEO
= 100µA
I
I
= 2mA, I
C
= 1.25A
I
I
= 2mA, I
C
= 0.7A
V
I
= 3V
V
R
= 50V
I
F
= 1.25A
V
CE
= 4V, I
C
= 1A, Ta = 25°C
Limits
min
50
—
—
—
—
—
800
typ
+
—
1.3
1.1
5
—
1.6
7000
max
—
2.2
1.7
8.5
100
2.3
—
Unit
V
V
mA
µA
V
—
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor
+
: The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
10
500
max
—
—
Unit
ns
ns
NOTE 1 TEST CIRCUIT
INPUT
Measured device
OPEN
PG
50Ω
C
L
OUTPUT
V
O
TIMING DIAGRAM
50%
50%
R
L
INPUT
OUTPUT
50%
50%
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 3V
P-P
(2) Input-output conditions : R
L
= 8.3Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
