MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
10
5
7
5
DC Amplification Factor
Collector Current Characteristics
V
CE
= 4V
Grounded Emitter Transfer Characteristics
1.6
V
CE
= 4V
DC amplification factor h
FE
Collector current Ic (A)
3
2
Ta = 75°C
1.2
10
4
7
5
3
2
Ta = 25°C
Ta = –20°C
0.8
Ta = 75°C
Ta = 25°C
10
3
7
5
3
2
0.4
Ta = –20°C
10
2 1
10
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
Collector current Ic (mA)
0
0
0.5
1.0
1.5
2.0
Input voltage V
I
(V)
Input Characteristics
25
2.0
Clamping Diode Characteristics
20
Forward bias current I
F
(A)
Ta = 25°C
Input current I
I
(mA)
Ta = –20°C
1.5
15
Ta = 75°C
1.0
10
Ta = 25°C
0.5
Ta = 75°C
Ta = –20°C
5
0
0
2
4
6
8
10
0
0
0.5
1.0
1.5
2.0
Input voltage V
I
(V)
Forward bias voltage V
F
(V)
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
