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M66256FP 参数 Datasheet PDF下载

M66256FP图片预览
型号: M66256FP
PDF下载: 下载PDF文件 查看货源
内容描述: 5120个8位线存储器(FIFO ) [5120 x 8-BIT LINE MEMORY (FIFO)]
分类和应用: 存储光电二极管先进先出芯片
文件页数/大小: 11 页 / 150 K
品牌: MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
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MITSUBISHI
〈DIGITAL
ASSP〉
M66256FP
5120
×
8-BIT LINE MEMORY (FIFO)
• Matters that needs attention when WCK stops
n cycle
n+1 cycle
n cycle
Disable cycle
WCK
t
WCK
t
NWES
WE
t
DS
t
DH
t
DS
t
DH
D
n
(n)
(n)
Period for writing data (n)
into memory
Period for writing data (n)
into memory
WRES = “H”
Input data of n cycle is read at the rising edge after WCK of n cycle and writing operation starts in the WCK low-level period of
n+1 cycle. The writing operation is complete at the falling edge after n+1 cycle.
To stop reading write data at n cycle, enter WCK before the rising edge after n+1 cycle.
When the cycle next to n cycle is a disable cycle, WCK for a cycle requires to be entered after the disable cycle as well.
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