ISSUE 1.7 April 2001
SYS84000RKX-85/10/12
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Parameter
Symbol
Min
Typ
Max
Unit
(2)
Voltage on any pin relative to VSS
Power Dissipation
VT
-0.3
-
-
-
-
7.0
2.0
125
V
W
oC
PT
Storage Temperature
TSTG
-55
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
VIH
VIL
TA
4.5
2.2
-0.3
0
5.0
5.5
VCC+0.3
0.8
V
V
Input High Voltage
Input Low Voltage
Operating Temperature (Commercial)
(Industrial)
-
-
-
-
V
70
oC
oC
TAI
-40
85
DC Electrical Characteristics
(VCC=5V±10%)
TA 0 to 70 oC
Parameter
Symbol Test Condition
Min Typ max Unit
I/P Leakage Current
Address,OE,WE ILI
0V < VIN < VCC
CS = VIH, VI/O = GND to VCC
ICC1 Min. Cycle, CS = VIL,VIL<VIN<VIH
-8
-8
-
-
-
-
-
-
-
-
-
8
8
µA
µA
Output Leakage Current
Operating Supply Current
Standby Supply Current
ILO
140 mA
TTLlevels ISB1
CMOSlevels ISB2
-L Version (CMOS) ISB3
CS = VIH
-
24
16
880
0.4
-
mA
mA
uA
V
CS > VCC-0.2V, 0.2<VIN<VCC-0.2V
CS > VCC-0.2V, 0.2<VIN<VCC-0.2V
-
-
Output Voltage VOL IOL = 64.0mA
VOH IOH = -15.0mA
-
2.4
V
Typical values are at VCC=5.0V,TA=25oC and specified loading.
Add 420mA to -L & -P CMOS standby currents to obtain industrial temp range parameters.
Capacitance (VCC=5V±10%,TA=25oC)
Note: Capacitance calculated, not measured.
Parameter
Symbol Test Condition
max
Unit
Input Capacitance (Address,OE,WE)
I/P Capacitance (other)
I/O Capacitance
CIN1 VIN = 0V
CIN2 VIN = 0V
CI/O VI/O = 0V
64
12
12
pF
pF
pF
2
MOSAIC [ MOSAIC ]
