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SYS84000RKXLI-10 参数 Datasheet PDF下载

SYS84000RKXLI-10图片预览
型号: SYS84000RKXLI-10
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×8 SRAM模块 [4M x 8 SRAM MODULE]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 7 页 / 85 K
品牌: MOSAIC [ MOSAIC ]
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SYS84000RKX-85/10/12  
ISSUE 1.7 April 2001  
Read Cycle Timing Waveform(1,2)  
t RC  
Address  
OE  
tAA  
tOE  
tOLZ  
tOH  
CS  
Don't  
care.  
tACS  
tOHZ (3)  
tCLZ (4,5)  
Dout  
Data Valid  
tCHZ (3,4,5)  
AC Read Characteristics Notes  
(1) WE is High for Read Cycle.  
(2) All read cycle timing is referenced from the last valid address to the first transition address.  
(3) tCHZ and tOHZ are defined as the time at which the outputs achieve open circuit conditions and are  
not referenced to output voltage levels.  
(4) At any given temperature and voltage condition, tCHZ (max) is less than tCLZ (min) both for a given module  
and from module to module.  
(5) These parameters are sampled and not 100% tested.  
Write Cycle No.1 Timing Waveform(1,4)  
tWC  
Address  
tWR(7)  
tAS(6)  
OE  
tAW  
tCW  
CS  
Don't  
Care  
WE  
tOHZ(3,9)  
tOW  
tWP(2)  
(8)  
High-Z  
Dout  
Din  
tDW  
Data Valid  
tDH  
High-Z