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V62C21164096L-85B 参数 Datasheet PDF下载

V62C21164096L-85B图片预览
型号: V62C21164096L-85B
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16 , 0.20微米CMOS静态RAM [256K x 16, 0.20 um CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 10 页 / 174 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V62C21164096
NOTES:
1. WE = V
IH
.
2. CE
1
= V
IL
. CE
2
= V
IH
.
3. Address valid prior to or coincident with CE transition LOW.
4. OE = V
IL
.
5. Transition is measured
±500mV
from steady state with C
L
= 5pF. This parameter is guaranteed and not 100% tested.
6. UBE = V
IL
, LBE = V
IL
.
7. CE
2
is offered on BGA package only.
CILETIV LESOM
Read Cycle 1
(1, 2, 7)
ADDRESS
OE
UBE, LBE
I/O
ADDRESS
I/O
ADDRESS
CE
1
CE
2
I/O
Switching Waveforms (Read Cycle)
t
RC
t
AA
t
OE
t
OLZ
t
BLZ
t
OHZ(5)
t
BHZ
t
BA
Read Cycle 2
(1, 2, 4, 6, 7)
t
RC
t
OH
t
AA
t
OH
Read Cycle 3
(1, 3, 4, 6, 7)
t
ACS
t
CLZ(5)
t
CHZ(5)
V62C21164096 Rev. 1.6 October 2001
7