Silicon Bipolar High f
T
Low Noise Microwave Transistors
Absolute Maximum Ratings
MP4T645 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°
C
Derate Linearly to:
+150° Chip
C
+125° Plastic Package (SOT-23)
C
+150° Ceramic Package (Micro-X)
C
400 mW
200 mW
300 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
25 V
12 V
1.5 V
65 mA
200°
C
-65° to +200°
C
C
-65° to +125°
C
C
MP4T645 Series
Electrical Specifications @ 25°
C
MP4T645 Series
MP4T64500
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 8 volts
I
C
= 20 mA
V
CE
= 8 volts
I
C
= 20 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
V
CE
= 8 volts
I
C
= 7 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8 volts
I
C
= 7 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8 volts
I
C
= 10 mA
f = 2 GHz
f = 4 GHz
V
CE
= 8 volts
I
C
= 10 mA
f = 1 GHz
f = 4 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
18 typ
11 min
7 typ
NF
dB
1.7 max
2.0 typ
GTU (max)
dB
18 typ
11 typ
MAG
dB
14 typ
12 typ
P
1dB
dBm
16 typ
11 typ
16 typ
11 typ
16 typ
11 typ
13 typ
10 typ
14 typ
11.5 typ
16 typ
10 typ
17 typ
11 typ
1.7 max
2.5 typ
1.7 max
2.0 typ
16 typ
10 min
17 typ
10 min
6.5 typ
Chip
10 typ
MP4T64535
SOT-23
8 typ
MP4T64533
Micro-X
9 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB
Compression
Note:
The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23).
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
