Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Typical Performance Curves
MP4T645 Series
NOMINAL POWER DERATING CURVES
500
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMP (C)
MP4T64533 in
SOT-23 Package
MP4T64535 in
Micro-X Package
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T64535)
0.6
COLLECTOR-BASE
CAPACITANCE (C
CB
) (pF)
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
1
10
COLLECTOR-BASE VOLTAGE
(V
CB
) (Volts)
100
450
TOTAL POWER
DISSIPATION (mW)
MP4T64500 Chip on
Infinite Heat Sink
NOMINAL GAIN vs FREQUENCY at
V
CE
= 8 VOLTS, I
C
= 10 mA (MP4T64535)
24
20
GAIN (dB)
16
GTU (MAX)
12
8
|S
21E
|2
4
0
1
2
FREQUENCY (GHz)
5
10
GAIN (dB)
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.5 GHz, V
CE
= 8 Volts (MP4T64535)
15
14
13
12
11
10
GTU (MAX)
MAG
9
8
7
6
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440