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N02M083WL1AD 参数 Datasheet PDF下载

N02M083WL1AD图片预览
型号: N02M083WL1AD
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步医疗CMOS SRAM 256Kx8位 [2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 213 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = V
IH
)
N02M083WL1A
Page Address (A4 - A17)
Open page
...
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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