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N02M083WL1AD 参数 Datasheet PDF下载

N02M083WL1AD图片预览
型号: N02M083WL1AD
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步医疗CMOS SRAM 256Kx8位 [2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 213 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N02M083WL1A
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 30pF
-40 to +85
o
C
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
50
0
10
15
10
0
0
15
100
70
70
50
0
0
30
40
0
5
30
30
2.3 - 3.6 V
Min.
100
100
100
35
10
5
0
0
10
70
50
50
40
0
0
20
20
20
Max.
2.7 - 3.6 V
Min.
70
70
70
35
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5