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N02M083WL1AD 参数 Datasheet PDF下载

N02M083WL1AD图片预览
型号: N02M083WL1AD
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步医疗CMOS SRAM 256Kx8位 [2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 213 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
N02M083WL1A
Rating
–0.3 to V
CC
+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240
o
C, 10sec(Lead only)
Unit
V
V
mW
o
C
o
C
o
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1
µs
Cycle Time
2
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
Page Mode Operating Supply Current
@ 70 ns Cycle Time
(Refer to Power
Savings with Page Mode Operation
diagram)
Maximum Standby Current
3
Symbol
V
CC
V
DR
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
OH
= 0.2mA
I
OL
= -0.2mA
V
IN
= 0 to V
CC
OE = V
IH
or Chip Disabled
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=2.3 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 2.3 V
V
CC
= 1.8V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
1.5
10.0
Chip Disabled
3
Test Conditions
Min.
2.3
1.8
V
CC
-0.6
–0.3
V
CC
–0.2
0.2
0.5
0.5
2.0
12.0
V
CC
+0.3
0.6
Typ
1
Max
3.6
Unit
V
V
V
V
V
V
µA
µA
mA
mA
I
CC3
4.0
mA
I
SB1
2.0
20.0
µA
Maximum Data Retention Current
3
I
DR
10.0
µA
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3