2SK2369/2SK2370
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source On-State Resistance
SYMBOL
R
DS(on)
MIN.
TYP.
0.30
0.32
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
2400
500
45
35
60
105
65
65
15
30
1.0
500
3.5
2.5
7.5
100
±100
MAX.
0.35
0.40
3.5
V
S
UNIT
Ω
TEST CONDITIONS
V
GS
= 10 V
I
D
= 10 V
2SK2369
2SK2370
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
DS
= V
DSS
, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A
V
GS
= 10 V
V
DD
= 150 V
R
G
= 10
Ω
R
L
= 15
Ω
I
D
= 20 A
V
DD
= 400 V
V
GS
= 10 V
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0
di/dt = 50 A/
µ
s
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20 - 0 V
50
Ω
Test Circuit 2 Switching Time
D.U.T.
L
V
DD
PG.
R
G
R
G
= 10
Ω
R
L
V
GS
Wave Form
V
GS
0
10 %
V
GS (on)
90 %
V
DD
I
D
90 %
90 %
I
D
D
Wave Form
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1us
Duty Cycle
≤
1 %
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
NEC [ NEC ]
