2SK2369/2SK2370
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th (t)
- Transient Thermal Resistance - (˚C/W)
1 000
100
10
R
th (ch-c)
= 0.89 ˚C/W
1
0.1
0.01
T
C
= 25 ˚C
Single Pulse
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1 000
R
th (ch-a)
= 41.7 ˚C/W
PW - Pulse Width - (s)
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - (S)
100
T
ch
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
V
DS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.5
Pulsed
2.0
10
R
DS (on)
Drain to Source On-State Resistance - (Ω)
1.5
1.0
1.0
0.5
I
D
= 20 A
10 A
5A
1.0
10
I
D
- Drain Current - (A)
100
0
5
10
15
20
25
30
V
GS
- Gate to Source Voltage - (V)
GATE TO SOURCE CUT OFF VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS (off)
- Gate to Source Cutoff Voltage - (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
= 10 V
I
D
= 1 mA
R
DS (on)
- Drain to Source on-State Resistance - (Ω)
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1.0
10
100
V
GS
= 10 V
–50 –25
0
25
50
75 100 125 150 175
I
D
- Drain Current - (A)
T
ch
- Channel Temperature - (˚C)
4
NEC [ NEC ]
