PS2503-1, -2, -4, PS2503L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
(PS2503-1)
(PS2503L-1)
Diode
Reverse Voltage
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
(PW = 100
µ
s, Duty Cycle 1 %)
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Coupled
Isolation Voltage
*1
Storage Temperature
Operating Temperature
Lead Temperature (Soldering 10 s)
BV
T
stg
T
opt
T
sol
5 000
–55 to +150
–55 to +100
260
5 000
–55 to +150
–55 to +100
260
V
r.m.s.
°C
°C
°C
V
CEO
V
ECO
I
C
∆P
C
/˚C
P
C
40
0.6
30
1.5
150
40
0.6
30
1.2
120
V
V
mA
mW/˚C
mW/Channel
V
R
I
F
∆P
D
/˚C
P
D
I
F(Peak)
6
80
1.5
150
1
6
80
1.2
120
1
V
mA
mW/˚C
mW/Channel
A
(PS2503-2, 4)
(PS2503L-2, 4)
*1
AC voltage for 1 minute at T
A
= 25
°C,
RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Forward Voltage
Diode
Reverse Current
Junction Capacitance
Transistor
Collector to Emitter Dark Current
Current Transfer Ratio*
2
Collector Saturation Voltage
Coupled
Isolation Resistance
Isolation Capacitance
Rise Time*
3
Fall Time*
3
SYMBOL
V
F
I
R
C
t
I
CEO
CTR
V
CE(sat)
R
1-2
C
1-2
t
r
t
f
10
11
0.5
20
30
100
200
50
100
400
0.25
MIN.
TYP.
1.1
MAX.
1.3
5
UNIT
V
TEST CONDITIONS
I
F
= 1 mA
V
R
= 5 V
V = 0, f = 1 MHz
V
CE
= 40 V, I
F
= 0
I
F
= 1 mA, V
CE
= 5 V
I
F
= 1 mA, I
C
= 0.2 mA
V
in-out
= 1 kV
V = 0, f = 1 MHz
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
µ
A
pF
nA
%
V
Ω
pF
µ
s
µ
s
*2
CTR rank (only PS2503-1, PS2503L-1)
K : 200 to 400
L : 150 to 300
M : 100 to 200
*3
Test Circuit for Switching Time
PULSE INPUT
PW = 100
µ
s
Duty Cycle
= 1/10
V
CC
I
F
V
OUT
50
Ω
R
L
= 10 kΩ
2
NEC [ NEC ]
