PS2503-1, -2, -4, PS2503L-1, -2, -4
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
P
C
- Transistor Power Dissipation - mW
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
P
D
- Diode Power Dissipation - mW
PS2503-1
PS2503L-1
100
1.5 mW / °C
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
50
1.2 mW / °C
PS2503-1
PS2503L-1
100
1.5 mW / °C
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
50
1.2 mW / °C
0
25
50
75
100
125
150
0
25
T
A
- Ambient Temperature - ˚C
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
I
C
- Collector Current - mA
50
75
100
125
T
A
- Ambient Temperature - ˚C
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12
10
5 mA
100 °C
60 °C
25 °C
0 °C
–25 °C
–55 °C
4 mA
3 mA
2 mA
I
F
- Forward Current - mA
10
5
8
6
1.5 mA
4
1 mA
0.8 mA
I
F
= 0.6 mA
2
4
6
8
10
1
0.5
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
2
V
F
- Forward Voltage - V
0
V
CE
- Collector to Emitter Voltage - V
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100
I
CEO
- Collector to Emitter Dark Current - nA
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
30
10 mA
50
10
I
C
- Collector Current - mA
10
5.0
V
CE
= 40 V
30 V
20 V
10 V
5 mA
5
2 mA
1 mA
1.0
0.5
I
F
= 0.8 mA
1.0
0.3
0.1
–25
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
T
A
- Ambient Temperature - ˚C
V
CE(sat)
- Collector tSaturation Voltage - V
3
NEC [ NEC ]
