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1PT06E-T 参数 Datasheet PDF下载

1PT06E-T图片预览
型号: 1PT06E-T
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感栅可控硅, 1A [Sensitive gate SCRs, 1A]
分类和应用: 可控硅
文件页数/大小: 4 页 / 189 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
 浏览型号1PT06E-T的Datasheet PDF文件第1页浏览型号1PT06E-T的Datasheet PDF文件第2页浏览型号1PT06E-T的Datasheet PDF文件第4页  
SEMICONDUCTOR
1PT Series
RoHS
RoHS
ORDERING INFORMATION SCHEME
1 PT 06
Current
1 = 1A, I
T(RMS)
E
-
T
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
E = TO-92
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum power dissipation versus RMS
on-state current (full cycle)
P(W)
5
1.0
4
0.8
3
2
1
0
0
0.2
0.4
I
T(RMS)
(A)
Fig.2 RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
0.6
0.4
0.2
0
0.6
0.8
1.0
0
25
50
T
C
(°C)
75
100
125
Fig.3 On-state characteristics (maximum values)
I
TM
(A), I²t(A²s)
Tjmax
Vto=0.85V
Rd=60mΩ
Fig.4 Surge peak on-state current versus number
of cycles
I
TSM
(A)
t=10ms
Half cycle
10
20
18
16
12
10
1.0
Tj=Tjmax
Tj=25°C
8
6
4
2
2.0
2.5
0
Non repetltlve
Tj lntla=25
°
C
0.1
0
0.5
1.0
V
TM
(V)
1.5
Number of cycles
1
10
100
1000
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