SEMICONDUCTOR
1PT Series
RoHS
RoHS
Fig.5 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms,
and corresponding value of l²t
100
l TSM (A), I²t (A²s)
Tj lntlal=25
°
C
Fig.6 Relative variation of gate trigger current,
holding current and latching current
versus junction temperature (typical values)
6.0
5.0
IGT,IH,IL[T]/IGT,IH,IL[T]=25°C
dl/dt≤50 A / S
4.0
I
TSM
l
GT
10
3.0
2.0
t=10ms
Half cycle
IH&IL
Tj(
°
C)
1.0
1
0.01
0.1
1.0
10.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Case Style
TO-92
Ø
RoHS
5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
1
2
3
0.50(0.020)
0.40(0.016)
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.14(0.045)
1.40(0.055)
1.14(0.045)
4.20(0.165)
3.20(0.126)
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