WF5025 series
Electrical Characteristics
WF5025AL
×
(2.5V operation)
V
DD
= 2.25 to 2.75V, V
SS
= 0V, Ta =
−
40 to +85
°
C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 2.25V, I
OH
= 4mA
Q: Measurement cct 2, V
DD
= 2.25V, I
OL
= 4mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
WF5025AL1
WF5025AL2
Current consumption
I
DD2
Measurement cct 3, load cct 1,
INHN = open, C
L
= 30pF, f = 50MHz
WF5025AL3
WF5025AL4
WF5025AL5
WF5025AL6
Standby current
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
I
ST
R
UP1
R
UP2
R
f
R
D
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
Measurement cct 3, INHN = LOW
Measurement cct 4
20
50
340
6.8
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
100
–
400
8
200
150
460
9.2
1.65
–
0.7V
DD
–
–
–
–
–
–
–
–
–
–
2
typ
1.95
0.3
–
–
–
–
7
4.5
3.5
2.9
2.5
2.4
–
6
max
–
0.4
–
0.3V
DD
10
10
14
9
7
5.8
5
4.8
3
12
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
µA
M
Ω
k
Ω
k
Ω
Ω
pF
Unit
NIPPON PRECISION CIRCUITS INC.—5