欢迎访问ic37.com |
会员登录 免费注册
发布采购

WF5025MLB 参数 Datasheet PDF下载

WF5025MLB图片预览
型号: WF5025MLB
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 16 页 / 122 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
 浏览型号WF5025MLB的Datasheet PDF文件第3页浏览型号WF5025MLB的Datasheet PDF文件第4页浏览型号WF5025MLB的Datasheet PDF文件第5页浏览型号WF5025MLB的Datasheet PDF文件第6页浏览型号WF5025MLB的Datasheet PDF文件第8页浏览型号WF5025MLB的Datasheet PDF文件第9页浏览型号WF5025MLB的Datasheet PDF文件第10页浏览型号WF5025MLB的Datasheet PDF文件第11页  
WF5025 series
WF5025BL1 (2.5V operation)
V
DD
= 2.25 to 2.75V, V
SS
= 0V, Ta =
−40
to +85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
I
DD2
I
ST
R
UP1
R
UP2
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
R
f
R
D
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
Condition
min
Q: Measurement cct 1, V
DD
= 2.25V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.25V, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
Measurement cct 3, load cct 1, INHN = open, C
L
= 30pF,
f = 100MHz
Measurement cct 3, INHN = LOW
Measurement cct 4
20
50
170
6.8
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
100
200
8
200
150
230
9.2
kΩ
kΩ
pF
1.65
0.7V
DD
2
typ
1.95
0.3
14
6
max
0.4
0.3V
DD
10
10
28
3
12
V
V
V
V
µA
µA
mA
µA
MΩ
Unit
Current consumption
Standby current
INHN pull-up resistance
WF5025BL1 (3.0V operation)
V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
−40
to +85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
I
DD2
I
ST
R
UP1
R
UP2
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
R
f
R
D
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
Condition
min
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
Measurement cct 3, load cct 1, INHN = open, C
L
= 30pF,
f = 100MHz
Measurement cct 3, INHN = LOW
Measurement cct 4
15
50
170
6.8
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
75
200
8
150
150
230
9.2
kΩ
kΩ
pF
2.3
0.7V
DD
2
typ
2.4
0.3
19
4
max
0.4
0.3V
DD
10
10
38
5
8
V
V
V
V
µA
µA
mA
µA
MΩ
Unit
Current consumption
Standby current
INHN pull-up resistance
NIPPON PRECISION CIRCUITS INC.—7