5076 series
ELECTRICAL CHARACTERISTICS
5076
×
1 to 5076
×
5
V
DD
= 1.6 to 2.0V, V
C
= 0.5V
DD
, V
SS
= 0V, Ta = –40 to +85
°
C unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Min
5076
×
1 (f
O
), Measurement circuit 1, no load,
f
O
= 27MHz, f
OUT
= 27MHz, V
DD
= 1.8V
5076
×
2 (f
O
/2), Measurement circuit 1, no load,
f
O
= 27MHz, f
OUT
= 13.5MHz, V
DD
= 1.8V
Current consumption
I
DD
5076
×
3 (f
O
/4), Measurement circuit 1, no load,
f
O
= 27MHz, f
OUT
= 6.75MHz, V
DD
= 1.8V
5076
×
4 (f
O
/8), Measurement circuit 1, no load,
f
O
= 27MHz, f
OUT
= 3.38MHz, V
DD
= 1.8V
5076
×
5 (f
O
/16), Measurement circuit 1, no load,
f
O
= 27MHz, f
OUT
= 1.69MHz, V
DD
= 1.8V
HIGH-level output voltage
LOW-level output voltage
Oscillator block built-in
resistance
V
OH
V
OL
R
VC1
R
VC2
V
C
= 0.2V
C
VC1
Oscillator block built-in
capacitance
C
VC2
Design value (a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance.
V
C
= 0.9V
V
C
= 1.6V
V
C
= 0.2V
V
C
= 0.9V
V
C
= 1.6V
VC input resistance
VC input impedance
VC input capacitance
Modulation
characteristics
*1
R
VIN
Z
VIN
C
VIN
fm
Measurement circuit 4, Ta = 25°C
Measurement circuit 5, V
C
= 0V, f = 10kHz, Ta = 25°C
(a monitor pattern on a wafer is tested)
Measurement circuit 5, V
C
= 0V, f = 10kHz, Ta = 25°C
(a monitor pattern on a wafer is tested)
Measurement circuit 6, –3dB frequency, V
DD
= 1.8V,
V
C
= 1.8Vp-p, Ta = 25°C, f
O
= 27MHz
Q pin, Measurement circuit 2, I
OH
= –2.0mA
Q pin, Measurement circuit 2, I
OL
= 2.0mA
Measurement circuit 3
210
–
–
–
–
–
–
10
–
–
–
420
4.7
2.9
1.7
4.7
2.9
1.7
–
530
31
100
840
–
–
–
–
–
–
–
–
–
–
kΩ
pF
pF
pF
pF
pF
pF
MΩ
kΩ
pF
kHz
–
–
–
–
–
V
DD
– 0.4
–
210
Typ
0.5
0.4
0.3
0.3
0.3
–
–
420
Max
1.0
0.8
0.6
0.6
0.6
–
0.4
840
mA
mA
mA
mA
mA
V
V
kΩ
Unit
*1. The modulation characteristics may vary with the crystal used.
SEIKO NPC CORPORATION —5
NPC [ NIPPON PRECISION CIRCUITS INC ]
