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M25P05-AVMP6G 参数 Datasheet PDF下载

M25P05-AVMP6G图片预览
型号: M25P05-AVMP6G
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Kbit的串行闪存, 50MHz的SPI总线接口 [512-Kbit, serial flash memory, 50 MHz SPI bus interface]
分类和应用: 闪存存储
文件页数/大小: 52 页 / 1092 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P05-A
Instructions
6.7
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit
being shifted out, at a maximum frequency f
C
, during the falling edge of Serial Clock (C).
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
There is no address roll-over; when the highest address (0FFFFh) is reached, the
instruction should be terminated.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 13. Read data bytes at higher speed (FAST_READ) instruction sequence
and data-out sequence
S
0
C
Instruction
24-bit address
1
2
3
4
5
6
7
8
9 10
28 29 30 31
D
High Impedance
Q
23 22 21
3
2
1
0
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy byte
D
7
6
5
4
3
2
1
0
DATA OUT 1
DATA OUT 2
1
0
7
MSB
6
5
4
3
2
1
0
7
MSB
AI04006
Q
7
MSB
6
5
4
3
2
1. Address bits A23 to A16 must be set to 00h.
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