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M36L0T7050T2ZAQF 参数 Datasheet PDF下载

M36L0T7050T2ZAQF图片预览
型号: M36L0T7050T2ZAQF
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(多银行,多层次,突发)闪存和32兆(2MB ×16) PSRAM ,多芯片封装 [128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 22 页 / 443 K
品牌: NUMONYX [ NUMONYX B.V ]
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M36L0T7050T2, M36L0T7050B2
Maximum rating
4
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 3.
Symbol
T
A
T
BIAS
T
STG
V
IO
V
DDF
V
DDQ
, V
CCP
V
PPF
I
O
t
VPPFH
Absolute maximum ratings
Value
Parameter
Min
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Flash Memory Core Supply Voltage
PSRAM and Input/Output Supply
Voltages
Flash Program Voltage
Output Short Circuit Current
Time for V
PPF
at V
PPFH
–25
–25
–55
–0.5
–0.2
–0.2
–0.2
Max
85
85
125
3.6
2.5
3.6
10
100
100
°C
°C
°C
V
V
V
V
mA
hours
Unit
15/22