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M36L0T7050T2ZAQF 参数 Datasheet PDF下载

M36L0T7050T2ZAQF图片预览
型号: M36L0T7050T2ZAQF
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(多银行,多层次,突发)闪存和32兆(2MB ×16) PSRAM ,多芯片封装 [128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 22 页 / 443 K
品牌: NUMONYX [ NUMONYX B.V ]
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Signal descriptions  
M36L0T7050T2, M36L0T7050B2  
2.20  
VPPF Program Supply Voltage  
V
is both a Flash control input and a Flash power supply pin. The two functions are  
PPF  
selected by the voltage range applied to the pin.  
If V is kept in a low voltage range (0V to V  
) V is seen as a control input. In this  
PPF  
PPF  
DDQ  
case a voltage lower than V  
gives an absolute protection against Program or Erase,  
PPLKF  
while V  
> V  
enables these functions (see the M58LT128HTB datasheet for the  
PPF  
PP1  
relevant values). V  
is only sampled at the beginning of a Program or Erase; a change in  
PPF  
its value after the operation has started does not have any effect and Program or Erase  
operations continue.  
If V  
is in the range of V  
it acts as a power supply pin. In this condition V  
must be  
PPF  
PPH  
PPF  
stable until the Program/Erase algorithm is completed.  
2.21  
VSS Ground  
V
is the common ground reference for all voltage measurements in the Flash (core and  
SS  
I/O Buffers) and PSRAM chips.  
Note:  
The Flash memory device in a system should have their supply voltage (V  
) and the  
DDF  
program supply voltage V  
decoupled with a 0.1µF ceramic capacitor close to the pin  
PPF  
(high frequency, inherently low inductance capacitors should be as close as possible to the  
package). See Figure 5: AC measurement load circuit. The PCB track widths should be  
sufficient to carry the required V  
program and erase currents.  
PPF  
12/22