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NAND01GW3B2CZA6F 参数 Datasheet PDF下载

NAND01GW3B2CZA6F图片预览
型号: NAND01GW3B2CZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位, 2千兆位, 2112字节/ 1056字的页面, 1.8 / 3V , NAND快闪存储器 [1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory]
分类和应用: 闪存存储
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
NAND01G-B2B, NAND02G-B2C  
Figure 29. Program/erase enable waveforms  
W
tVHWH  
WP  
RB  
I/O  
80h  
10h  
ai12477  
Figure 30. Program/erase disable waveforms  
W
tVLWH  
WP  
High  
RB  
I/O  
80h  
10h  
ai12478  
11.1  
Ready/Busy signal electrical characteristics  
Figure 32, Figure 31 and Figure 33 show the electrical characteristics for the Ready/Busy  
signal. The value required for the resistor R can be calculated using the following equation:  
P
(
)
V
V
DDmax  
OLmax  
+ I  
R min= -------------------------------------------------------------  
P
I
L
OL  
So,  
1.85V  
R min(1.8V)= ---------------------------  
P
+
3mA  
I
L
3.2V  
R min(3V)= ---------------------------  
P
+
8mA  
I
L
where I is the sum of the input currents of all the devices tied to the Ready/Busy signal. R  
L
P
max is determined by the maximum value of t .  
r
52/60