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NAND01GW3B2CZA6F 参数 Datasheet PDF下载

NAND01GW3B2CZA6F图片预览
型号: NAND01GW3B2CZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位, 2千兆位, 2112字节/ 1056字的页面, 1.8 / 3V , NAND快闪存储器 [1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory]
分类和应用: 闪存存储
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
NAND01G-B2B, NAND02G-B2C  
Figure 33. Resistor value versus waveform timings for Ready/Busy signal  
V
= 1.8V, C = 30pF  
V = 3.3V, C = 100pF  
DD L  
DD  
L
400  
300  
200  
400  
300  
200  
4
3
2
4
3
2
400  
300  
2.4  
200  
1.7  
120  
1.2  
100  
0
1
100  
0
1
0.85  
0.8  
100  
3.6  
90  
0.57  
0.6  
3.6  
60  
1.7  
0.43  
1.7  
30  
1.7  
3.6  
3.6  
1.7  
1
2
3
4
1
2
3
4
R
(KΩ)  
R (KΩ)  
P
P
t
t
r
ibusy  
f
ai07565B  
1. T = 25°C.  
11.2  
Data protection  
The Numonyx NAND device is designed to guarantee data protection during power  
transitions.  
A V detection circuit disables all NAND operations, if V is below the V threshold.  
LKO  
DD  
DD  
In the V range from V  
to the lower limit of nominal range, the WP pin should be kept  
DD  
LKO  
low (V ) to guarantee hardware protection during power transitions as shown in the below  
IL  
figure.  
Figure 34. Data protection  
Nominal Range  
V
DD  
V
LKO  
Locked  
Locked  
W
Ai11086  
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