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RD48F4400P0VBQ0 参数 Datasheet PDF下载

RD48F4400P0VBQ0图片预览
型号: RD48F4400P0VBQ0
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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P30  
Table 5:  
TSOP and Easy BGA Signal Descriptions (Sheet 2 of 2)  
Symbol  
Type  
Name and Function  
Reserved for Future Use: Reserved by Numonyx for future device functionality and enhancement.  
These should be treated in the same way as a Do Not Use (DU) signal.  
RFU  
DU  
NC  
Do Not Use: Do not connect to any other signal, or power supply; must be left floating.  
No Connect: No internal connection; can be driven or floated.  
Table 6:  
QUAD+ SCSP Signal Descriptions (Sheet 1 of 2)  
Symbol  
Type  
Name and Function  
ADDRESS INPUTS: Device address inputs. 64-Mbit: A[21:0]; 128-Mbit: A[22:0]; 256-Mbit:  
A[23:0]; 512-Mbit: A[24:0]. Note: The virtual selection of the 256-Mbit “Top parameter” die in the  
dual-die 512-Mbit configuration is accomplished by setting A[25] high (VIH).  
A[MAX:0]  
DQ[15:0]  
Input  
DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during  
memory, Status Register, Protection Register, and Read Configuration Register reads. Data balls float  
when the CE# or OE# are deasserted. Data is internally latched during writes.  
Input/  
Output  
ADDRESS VALID: Active low input. During synchronous read operations, addresses are latched on  
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.  
ADV#  
Input  
In asynchronous mode, the address is latched when ADV# going high or continuously flows through  
if ADV# is held low.  
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.  
FLASH CHIP ENABLE: Active low input. CE# low selects the associated flash memory die. When  
asserted, flash internal control logic, input buffers, decoders, and sense amplifiers are active. When  
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and  
WAIT outputs are placed in high-Z state.  
F1-CE#  
CLK  
Input  
Input  
WARNING: Chip enable must be driven high when device is not in use.  
CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode. During  
synchronous read operations, addresses are latched on the rising edge of ADV#, or on the next valid  
CLK edge with ADV# low, whichever occurs first.  
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.  
OUTPUT ENABLE: Active low input. OE# low enables the device’s output data buffers during read  
cycles. OE# high places the data outputs and WAIT in High-Z.  
F1-OE#  
RST#  
Input  
Input  
RESET: Active low input. RST# resets internal automation and inhibits write operations. This  
provides data protection during power transitions. RST# high enables normal operation. Exit from  
reset places the device in asynchronous read array mode.  
WAIT: Indicates data valid in synchronous array or non-array burst reads. Read Configuration  
Register bit 10 (RCR[10], WT) determines its polarity when asserted. WAIT’s active output is VOL or  
VOH when CE# and OE# are VIL. WAIT is high-Z if CE# or OE# is VIH  
.
WAIT  
Output  
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and  
valid data when deasserted.  
In asynchronous page mode, and all write modes, WAIT is deasserted.  
WRITE ENABLE: Active low input. WE# controls writes to the device. Address and data are latched  
WE#  
WP#  
Input  
Input  
on the rising edge of WE#.  
WRITE PROTECT: Active low input. WP# low enables the lock-down mechanism. Blocks in lock-  
down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function  
enabling blocks to be erased or programmed using software commands.  
Erase and Program Power: A valid voltage on this pin allows erasing or programming. Memory  
contents cannot be altered when VPP VPPLK. Block erase and program at invalid VPP voltages should  
not be attempted.  
Set VPP = VPPL for in-system program and erase operations. To accommodate resistor or diode drops  
from the system supply, the VIH level of VPP can be as low as VPPL min. VPP must remain above VPPL  
min to perform in-system flash modification. VPP may be 0 V during read operations.  
Power/  
lnput  
VPP  
VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500  
cycles. VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of  
this pin at 9 V may reduce block cycling capability.  
Datasheet  
20  
November 2007  
Order Number: 306666-11