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RD48F4400P0VBQ0 参数 Datasheet PDF下载

RD48F4400P0VBQ0图片预览
型号: RD48F4400P0VBQ0
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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P30
Table 6:
Symbol
VCC
VCCQ
VSS
RFU
DU
NC
QUAD+ SCSP Signal Descriptions (Sheet 2 of 2)
Type
Power
Power
Power
Name and Function
Device Core Power Supply:
Core (logic) source voltage. Writes to the flash array are inhibited
when V
CC
V
LKO
. Operations at invalid V
CC
voltages should not be attempted.
Output Power Supply:
Output-driver source voltage.
Ground:
Connect to system ground. Do not float any VSS connection.
Reserved for Future Use:
Reserved by Numonyx for future device functionality and enhancement.
These should be treated in the same way as a Do Not Use (DU) signal.
Do Not Use:
Do not connect to any other signal, or power supply; must be left floating.
No Connect:
No internal connection; can be driven or floated.
4.3
Figure 9:
Dual-Die Configurations
512-Mbit Easy BGA and TSOP Top or Bottom Parameter Block Diagram
Easy BGA & TSOP 512-Mbit (Dual-Die) Top or Bottom Parameter
Configuration
CE#
WP#
OE#
WE#
CLK
ADV#
Bottom Param Die
(256-Mbit)
A[MAX:1]
Top Param Die
(256-Mbit)
RST#
VCC
VPP
VCCQ
VSS
DQ[15:0]
WAIT
Figure 10: 512-Mbit QUAD+ SCSP Top or Bottom Parameter Block Diagram
QUAD+ 512-Mbit (Dual-Die) Top or Bottom Parameter
Configuration
F1-CE#
WP#
OE#
WE#
CLK
ADV#
Bottom Param Die
(256-Mbit)
A[MAX:0]
Top Param Die
(256-Mbit)
RST#
VCC
VPP
VCCQ
VSS
DQ[15:0]
WAIT
Note:
A
max
= V
ih
selects the Top parameter Die; A
max
= V
il
selects the Bottom Parameter Die.
November 2007
Order Number: 306666-11
Datasheet
21