BAT54SLT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
mA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
−
−
−
−
−
−
−
−
−
−
−
Typ
−
7.6
0.5
0.22
0.41
0.52
−
0.29
0.35
−
−
−
Max
−
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
mAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
