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BAT54SLT1G 参数 Datasheet PDF下载

BAT54SLT1G图片预览
型号: BAT54SLT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 双肖特基势垒二极管 [Dual Series Schottky Barrier Diodes]
分类和应用: 整流二极管测试光电二极管PC快速恢复二极管
文件页数/大小: 4 页 / 51 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BAT54SLT1
820
W
+10 V
2k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
0.1
mF
t
r
10%
t
p
T
I
F
t
rr
T
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
1 25°C
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
100
T
A
= 125°C
10
1.0
T
A
= 85°C
0.1
0.01
0.001
0.2
0.3
0.4
0.1
0.5
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0
5
1000
T
A
= 150°C
−55°C
T
A
= 25°C
15
25
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
C
T
, TOTAL CAPACITANCE (pF)
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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