NTD2955
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= −0.25 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −60 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −60 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250
mAdc)
(Negative Temperature Coefficient)
Static Drain−Source On−State Resistance
(V
GS
= −10 Vdc, I
D
= −6.0 Adc)
Drain−to−Source On−Voltage
(V
GS
= −10 Vdc, I
D
= −12 Adc)
(V
GS
= −10 Vdc, I
D
= −6.0 Adc, T
J
= 150°C)
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 3 and 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= −48 Vdc, V
GS
= −10 Vdc,
I
D
= −12 A)
DRAIN−SOURCE DIODE CHARACTERISTICS
(Note 3)
Diode Forward On−Voltage
(I
S
= 12 Adc, V
GS
= 0 V)
(I
S
= 12 Adc, V
GS
= 0 V, T
J
= 150°C)
Reverse Recovery Time
(I
S
= 12 A dI
S
/dt = 100 A/ ,V
GS
= 0 V)
A,
A/ms V
V
SD
−
−
t
rr
t
a
t
b
Reverse Recovery Stored Charge
3. Indicates Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
Q
RR
−
−
−
−
−1.6
−1.3
50
40
10
0.10
−
−
−
mC
−2.5
−
ns
Vdc
(V
DD
= −30 Vdc, I
D
= −12 A,
V
GS
= −10 V, R
G
= 9.1
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
GS
Q
GD
−
−
−
−
−
−
−
10
45
26
48
15
4.0
7.0
20
85
40
90
30
−
−
nC
ns
(V
DS
= −25 Vdc, V
GS
= 0 Vdc,
F = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
500
150
50
750
250
100
pF
V
GS(th)
−2.0
−
R
DS(on)
−
V
DS(on)
−1.86
−
gFS
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
−60
−
I
DSS
−
−
I
GSS
−
−
−
−
−10
−100
−100
−
67
−
−
Vdc
mV/°C
mAdc
nAdc
Vdc
−2.8
4.5
0.155
−4.0
−
0.180
Vdc
−2.6
−2.0
−
Mhos
mV/°C
W
8.0
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