NTD2955
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1200
C, CAPACITANCE (pF)
1000
800
600
400
200
0
10
C
oss
C
rss
5
−V
GS
0
−V
DS
5
10
15
20
25
C
iss
C
rss
15
V
DS
Q
T
V
GS
7.5
5
2.5
0
0
2
4
6
8
10
12
14
Q
GS
Q
GD
30
20
10
0
16
60
50
40
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
12.5
10
I
D
= 12 A
T
J
= 25°C
C
iss
Q
T
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
15
−I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
10
1000
V
DD
= −30 V
I
D
= −12 A
V
GS
= −10 V
T
J
= 25°C
t
f
t
r
t, TIME (ns)
100
t
d(off)
10
t
d(on)
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 10. Diode Forward Voltage versus Current
V
GS
= −15 V
SINGLE PULSE
T
C
= 25°C
10
100
ms
1 ms
1
di/dt
I
S
10 ms
dc
t
rr
t
a
t
b
TIME
t
p
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
0.25 I
S
I
S
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
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