PE9601
Product Specification
Table 2. Absolute Maximum Ratings
Symbol
V
DD
V
I
I
I
I
O
T
stg
Table 4. ESD Ratings
Units
V
V
Note 1:
mA
mA
°C
Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Parameter/Conditions
Supply voltage
Voltage on any input
DC into any input
DC into any output
Storage temperature range
Min
-0.3
-0.3
-10
-10
-65
Max
4.0
V
DD
+
0.3
+10
+10
150
Symbol
V
ESD
Parameter/Conditions
ESD voltage (Human Body
Model) – Note 1
Level
1000
Units
V
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the
same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 4.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 3. Operating Ratings
Symbol
V
DD
T
A
Parameter/Conditions
Supply voltage
Operating ambient
temperature range
Min
2.85
-40
Max
3.15
85
Units
V
°C
Document No. 70-0025-05
│
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©2005 Peregrine Semiconductor Corp. All rights reserved.
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