TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 12 V
V
AA
= 12 V
t
p(g)
≥
20 µs
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
I
H
Holding current
Initiating I
T
= 100 mA
V
AA
= 12 V
Initiating I
T
= 100 mA
V
T
dv/dt
NOTE
On-state
voltage
Critical rate of rise of
off-state voltage
I
T
= 8 A
V
D
= rated V
D
(see Note 5)
I
G
= 0
T
C
= 110°C
400
T
C
= - 40°C
R
L
= 100
Ω
T
C
= 110°C
0.2
100
mA
40
1.7
V
V/µs
R
L
= 100
Ω
0.8
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
TEST CONDITIONS
T
C
= 110°C
T
C
= 110°C
t
p(g)
≥
20
µs
T
C
= - 40°C
8
MIN
TYP
MAX
2
2
20
2.5
1.5
V
UNIT
mA
mA
mA
5: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3
62.5
UNIT
°C/W
°C/W
PRODUCT
2
INFORMATION
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