TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC03AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
1
TC03AB
V
AA
=12 V
I
GT
- Gate Trigger Current - mA
t
p(g)
≥
20 µs
10
V
GT
- Gate Trigger Voltage - V
R
L
= 100
Ω
0·8
0·6
0·4
V
AA
=12 V
0·2
R
L
= 100
Ω
t
p(g)
≥
20 µs
1
-50
-25
0
25
50
75
100
125
0
-50
-25
0
25
50
75
100
125
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 5.
HOLDING CURRENT
vs
CASE TEMPERATURE
100
TC03AD
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
2·5
T
C
= 25 °C
t
P
= 300 µs
2
Duty Cycle
≤
2 %
TC03AE
V
TM
- Peak On-State Voltage - V
125
V
AA
= 12 V
Initiating I
T
= 100 mA
I
H
- Holding Current - mA
1·5
10
1
0·5
1
-50
-25
0
25
50
75
100
0
0·1
1
10
100
T
C
- Case Temperature - °C
I
TM
- Peak On-State Current - A
Figure 7.
Figure 8.
PRODUCT
4
INFORMATION
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