TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
‘4165
‘4180
Repetitive peak off-state voltage, (see Note 1)
‘4200
‘4265
‘4300
‘4360
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
T
J
T
stg
I
TSM
55
60
2.1
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
TSP
500
300
250
220
200
200
200
160
100
A
V
DRM
SYMBOL
VALUE
±135
±145
±155
±200
±230
±270
V
UNIT
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially the TISP4xxxH4BJ must be in thermal equilibrium with T
J
= 25°C.
The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
PRODUCT
2
INFORMATION
POINN [ POWER INNOVATIONS LTD ]
