TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
electrical characteristics for the T and R terminals, T
A
= 25°C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
TEST CONDITIONS
T
A
= 25°C
T
A
= 85°C
‘4165
‘4180
V
(BO)
Breakover voltage
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
‘4200
‘4265
‘4300
‘4360
‘4165
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
‘4180
‘4200
‘4265
‘4300
‘4360
±0.15
±0.225
±5
T
A
= 85°C
V
d
= 1 V rms, V
D
= 0,
V
d
= 1 V rms, V
D
= -1 V
V
d
= 1 V rms, V
D
= -2 V
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
D
= -100 V
‘4165 thru ‘4200
‘4265 thru ‘4360
f = 100 kHz,
f = 100 kHz,
f = 100 kHz,
f = 100 kHz,
‘4165 thru ‘4200
‘4265 thru ‘4360
C
off
Off-state capacitance
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
80
70
71
60
65
55
30
24
28
22
±10
90
84
79
67
74
62
35
28
33
26
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
MAX
±5
±10
±165
±180
±200
±265
±300
±360
±174
±189
±210
±276
±311
±373
±0.8
±3
±0.8
A
V
A
kV/µs
µA
V
V
UNIT
µA
thermal characteristics
PARAMETER
TEST CONDITIONS
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
R
θJA
Junction to free air thermal resistance
T
A
= 25 °C, (see Note 6)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
NOTE
50
MIN
TYP
MAX
113
°C/W
UNIT
6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT
INFORMATION
3
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