MITSUBISHI HVIGBT MODULES
CM800HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM(Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Conditions
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C, IGBT part
Ratings
3300
±20
800
1600
800
1600
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
I
CES
Item
Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 80mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 800A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 1650V, I
C
= 800A, V
GE
= 15V
V
CC
= 1650V, I
C
= 800A
V
GE1
= V
GE2
= 15V
R
G
= 2.5Ω
Resistive load switching operation
I
E
= 800A, V
GE
= 0V
I
E
= 800A,
die / dt = –1600A /
µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6.0
—
3.80
4.00
120
12.0
3.6
5.7
—
—
—
—
2.80
—
270
—
—
0.008
Max
10
7.5
0.5
4.94
—
—
—
—
—
1.60
2.00
2.50
1.00
3.64
1.40
—
0.012
0.024
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
Collector cutoff current
Gate-emitter
V
GE(th)
threshold voltage
I
GES
Gate-leakage current
Collector-emitter
V
CE(sat)
saturation voltage
C
ies
Input capacitance
C
oes
Output capacitance
C
res
Reverse transfer capacitance
Q
G
Total gate charge
t
d (on)
Turn-on delay time
t
r
Turn-on rise time
t
d (off)
Turn-off delay time
t
f
Turn-off fall time
V
EC(Note 2)
Emitter-collector voltage
t
rr (Note 2)
Reverse recovery time
Q
rr (Note 2)
Reverse recovery charge
R
th(j-c)Q
Thermal resistance
R
th(j-c)R
R
th(c-f)
Contact thermal resistance
(Note 4)
(Note 1)
Note 1.
2.
3.
4.
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
