MITSUBISHI HVIGBT MODULES
CM800HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
10
0
7
5
3
2
10
–1
7
5
REVERSE RECOVERY TIME t
rr
(
µs
)
t
d(off)
t
d(on)
t
r
t
f
V
CC
= 1650V, V
GE
=
±15V
R
G
= 2.5Ω, T
j
= 125°C
Inductive load
5 7 10
2
2 3
5 7 10
3
2 3
5
10
1
7
5
3
2
10
0
7
5
I
rr
10
3
7
5
3
2
t
rr
5 7 10
2
2 3
5 7 10
3
2 3
5
10
2
7
5
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
1
7 Single Pulse
5 T
C
= 25°C
3 R
th(j – c)
= 0.024°C/W
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
10
1
7 Single Pulse
5 T
C
= 25°C
3 R
th(j – c)
= 0.012°C/W
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
V
CC
= 1650V
I
C
= 800A
16
12
8
4
0
0
2000
4000
6000
8000
10000
GATE CHARGE Q
G
(nC)
Feb. 2000
REVERSE RECOVERY CURRENT I
rr
(A)
SWITCHING TIMES (
µs
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
V
CC
= 1650V, T
j
= 125°C
3 Inductive load
3
2 V
GE
=
±15V,
R
G
= 2.5Ω
2
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
