P3C1041
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Value
–0.5 to +4.6
–0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
DC Output Current
Value
–55 to +125
–65 to +150
20
Unit
°C
°C
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Industrial
Commercial
Ambient
Temperature
–40°C to +85°C
0°C to +70°C
GND
0V
0V
V
CC
3.3V ± 0.3V
3.3V ± 0.3V
CAPACITANCES
(4)
V
CC
= 3.3V, T
A
= 25°C, f = 1.0MHz
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
8
8
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Symbol
V
IH
V
IL
V
OL
V
OH
Parameter
Input High Voltage
Input Low Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
I
OL
= +8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
CC
= Max.,
I
LO
Output Leakage Current
CE
= V
IH
,
V
OUT
= GND to V
CC
CE
≥
V
IH
I
SB
Standby Power Supply
V
CC
= Max,
Current (TTL Input Levels) f = Max., Outputs Open
V
IN
≥
V
IH
or V
IN
≤
V
IL
CE
≥
V
CC
- 0.2V
I
SB1
Standby Power Supply
Current
(CMOS Input Levels)
V
CC
= Max,
f = 0, Outputs Open
V
IN
≥
V
CC
- 0.3V or
V
IN
≤
0.3V
___
10
mA
___
40
mA
-1
+1
µA
2.4
-1
+1
Test Conditions
P3C1041
Unit
Min
Max
V
CC
+0.3 V
2.0
–0.3
(3)
0.8
0.4
V
V
V
µA
I
LI
Document #
SRAM130
REV OR
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
