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P3C1041-20JI 参数 Datasheet PDF下载

P3C1041-20JI图片预览
型号: P3C1041-20JI
PDF下载: 下载PDF文件 查看货源
内容描述: 高速256K ×16 ( 4 MEG )静态CMOS RAM [HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 291 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1041
TIMING WAVEFORM OF READ CYCLE NO. 1
TIMING WAVEFORM OF READ CYCLE NO. 2 (OE CONTROLLED)
(5,6)
OE
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
not more negative than –2.0V and
V
IH
V
CC
+ 0.5V, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
5.
WE
is HIGH for READ cycle.
6.
CE
is LOW and
OE
is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with
CE
transition LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document #
SRAM130
REV OR
Page 4 of 10