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P4C1024 参数 Datasheet PDF下载

P4C1024图片预览
型号: P4C1024
PDF下载: 下载PDF文件 查看货源
内容描述: 高速128K ×8 CMOS静态RAM [HIGH SPEED 128K X 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 14 页 / 224 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1024
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)
(11)
CE
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Fig. 1 and 2
TRUTH TABLE
Mode
Standby
Standby
D
OUT
Disabled
Read
Write
CE
1
CE
2
OE WE
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
X
X
H
H
L
I/O
Power
High Z Standby
High Z Standby
High Z
D
OUT
High Z
Active
Active
Active
Figure 1. Output Load
* including scope and test fixture.
Figure 2. Thevenin Equivalent
Note:
Because of the ultra-high speed of the P4C1024, care must be
taken when testing this device; an inadequate setup can cause a
normal functioning part to be rejected as faulty. Long high-
inductance leads that cause supply bounce must be avoided by
bringing the V
CC
and ground planes directly up to the contactor
fingers. A 0.01 µF high frequency capacitor is also required
between V
CC
and ground.
To avoid signal reflections, proper termination must be used; for
example, a 50Ω test environment should be terminated into a 50Ω load
with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω
resistor must be used in series with D
OUT
to match 166Ω (Thevenin
Resistance).
Document #
SRAM124
REV A
Page 7 of 14