P4C148/P4C149
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
– 55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
– 55 to +125
– 65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING
CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd
0V
0V
V
CC
5.0V
± 10%
5.0V
± 10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Sym.
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
I
SB1
Parameter
Output High Voltage
(TTL Load)
Output Low Voltage
(TTL Load)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CE, CS
= V
IH
,
V
OUT
= GND to V
CC
Mil.
Comm’l
Mil.
Comm’l
Mil.
Comm’l
Mil.
Comm’l
Test Conditions
I
OH
= –4 mA, V
CC
= Min.
I
OL
= +8 mA, V
CC
= Min
2.2
–0.5
(3)
–10
–5
–10
–5
P4C148
Min.
2.4
0.4
V
CC
+0.5
0.8
+10
+5
+10
+5
30
23
15
10
2.2
–0.5
(3)
–10
–5
–10
–5
Max.
P4C149
Min.
2.4
0.4
V
CC
+0.5
0.8
+10
+5
+10
+5
N/A
N/A
N/A
N/A
Max.
Unit
V
V
V
V
µA
µA
mA
mA
Standby Power Supply
CE
≥
V
IH
, V
CC
= Max.,
Current (TTL Input Levels) f=Max., Outputs Open
Standby Power Supply
Current
(CMOS Input Levels)
CE
≥
V
HC
, V
CC
= Max., f= 0,
Outputs Open
V
IN
≤
0.2V or V
IN
≥
V
CC
–0.2V
N/A = Not Applicable
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol Parameter
I
CC
Dynamic Operating Current
Temperature Range
Commercial
Military
-10 -12 -15 -20 -25 -35 -45 -55 Unit
130 130 120 115 100 100 95
95
mA
N/A N/A 145 135 125 120 115 115 mA
Document #
SRAM104
REV B
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
