P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
-10
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
Parameter
Read Cycle Time
Address Access
Time
Chip Enable
Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Output Enable
Low to Data Valid
Output Enable to
Output in Low Z
2
6
0
10
0
2
2
6
6
2
10
10
10
2
2
12
-12
-15
15
12
12
2
2
7
7
2
7
0
12
15
9
0
8
9
2
15
15
2
2
20
-20
25
20
20
2
2
10
12
2
9
0
20
-25
35
25
25
2
2
10
15
2
10
0
25
-35
45
35
35
2
2
14
25
2
14
0
35
-45
ns
45
45
ns
ns
ns
ns
15
30
ns
ns
ns
15
ns
ns
45
ns
Min Max Min
Max Min Max Min Max Min Max Min Max Min Max Unit
t
OHZ
Output Disable to
Output in High Z
t
PU
t
PD
Chip Enable to
Power Up Time
Chip Disable to
Power Down Time
OE
READ CYCLE NO.1 (OE controlled)
(5)
Notes:
5.
WE
is HIGH for READ cycle.
Document #
SRAM113
REV A
Page 4 of 13
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