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P4C198-12CI 参数 Datasheet PDF下载

P4C198-12CI图片预览
型号: P4C198-12CI
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速16K ×4的静态CMOS RAMS [ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS]
分类和应用:
文件页数/大小: 13 页 / 232 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C198/198L, P4C198A/198AL
READ CYCLE NO. 2 (ADDRESS Controlled)
(5,6)
READ CYCLE NO. 3 (CE
(12)
Controlled)
(5,7,8)
CE
Notes:
6.
CE
(CE
1
CE
2
for P4C198A/L) and
OE
are LOW READ cycle.
7.
OE
is LOW for the cycle.
8. ADDRESS must be valid prior to, or coincident with
CE
(CE
1
and
CE
2
for P4C198A/L) transition LOW.
9. Transition is measured ± 200mV from steady state voltage
prior to change, with loading as specified in Figure 1.
10. Read Cycle Time is measured from the last valid address
to the first transitioning address.
11. Transitions caused by a chip enable control have similar
delays irrespective of whether
CE
1
or
CE
2
causes them
(P4C198A/L).
12.
CE
1
,
CE
2
for P4C198A/L.
Document #
SRAM113
REV A
Page 5 of 13