P4C422
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
– 55 to +125
Unit
V
Symbol
T
BIAS
T
STG
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
DC Output Current
Value
– 55 to +125
– 65 to +150
20
Unit
°C
°C
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to 125°C
Gnd
0V
0V
Vcc
5.0V ±10%
5.0V ±10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Symbol
V
OH
V
OL
V
IH
V
IL
V
CL
I
IX
I
OZ
I
OS
Parameter
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Clamp Diode Voltage
Input Load Current
Output Current (High Z)
Output Short Circuit
Current
(3)
Test Conditions
I
OH
= –5.2 mA, V
CC
= Min.2.4
I
OL
= +8 mA, V
CC
= Min.
P4C422
Min
Max
V
0.4
2.1
0.8
Unit
V
V
V
V
µA
µA
mA
I
IN
= –10 mA
GND
≤
V
IN
≤
V
CC
V
OL
≤
V
OUT
≤
V
OH
, Output Disabled
V
CC
= Max., V
OUT
= GND
–1.5
–10
–10
10
10
90
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10
90
N/A
-12
90
N/A
-15
90
90
-20
90
90
-25
65
90
-35
65
90
Unit
mA
mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
5. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified I
OL
/I
OH
with a load capacitance of 15 pF (10, 12) or 30 pF (15,
20, 25, 35) as in Fig. 1a and 1b respectively.
6. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
7. t
W
is measured at t
WSA
= min.; t
WSA
is measured at t
W
= min.
Document #
SRAM101
REV. A
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
