Internet Data Sheet
HYB18TC256[80/16]0BF
256-Mbit Double-Data-Rate-Two SDRAM
1.2
Description
The 256-Mb DDR2 DRAM is a high-speed Double-Data-
Rate-Two CMOS DRAM device containing 536,870,912 bits
and internally configured as a quad -bank DRAM. The 256-
Mb device is organized as either 8 Mbit ×8 I/O ×4 banks or 4
Mbit ×16 I/O ×4 banks chip. These devices achieve high
speed transfer rates starting at 400 Mb/sec/pin for general
applications. See Table 1 to Table 4 for performance figures.
All of the control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and
CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS-DQS pair in a source synchronous
fashion.
A 15 bit address bus is used to convey row, column and bank
address information in a RAS-CAS multiplexing style.
The device is designed to comply with all DDR2 DRAM key
features:
The DDR2 device operates with a 1.8 V ± 0.1 V power
supply. An Auto-Refresh and Self-Refresh mode is provided
along with various power-saving power-down modes.
1. Posted CAS with additive latency
2. Write latency = read latency - 1
3. Normal and weak strength data-output driver
4. Off-Chip Driver (OCD) impedance adjustment
5. On-Die Termination (ODT) function
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode of
operation.
The DDR2 SDRAM is available in PG-TFBGA package.
TABLE 5
Ordering Information for Lead-Free Products (RoHS Compliant)
Product Type1)
Org.
CAS-RCD-RP
Latencies2)3)4)
Clock
(MHz)
Speed
Package
Note
5)
HYB18TC256800BF-2.5 ×8
HYB18TC256160BF-2.5 ×16
6-6-6
4-4-4
5-5-5
4-4-4
3-3-3
400
333
333
266
200
DDR2-800E
DDR2-667C
DDR2-667D
DDR2-533C
DDR2-400B
PG-TFBGA-60
PG-TFBGA-84
PG-TFBGA-60
PG-TFBGA-84
PG-TFBGA-60
PG-TFBGA-84
PG-TFBGA-60
PG-TFBGA-84
PG-TFBGA-60
PG-TFBGA-84
HYB18TC256800BF-3
HYB18TC256160BF-3
×8
×16
HYB18TC256800BF-3S ×8
HYB18TC256160BF-3S ×16
HYB18TC256800BF-3.7 ×8
HYB18TC256160BF-3.7 ×16
HYB18TC256800BF-5
HYB18TC256160BF-5
×8
×16
1) Please check with your Qimonda representative that leadtime and availability of your preferred device type and version meet your project
requirements.
2) CAS: Column Address Strobe
3) RCD: Row Column Delay
4) RP: Row Precharge
5) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Note: For product nomenclature see Chapter 9 of this data sheet
Rev. 1.3, 2007-05
5
07182006-DD60-22E6
QIMONDA [ QIMONDA AG ]
