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M306NNFHGP 参数 Datasheet PDF下载

M306NNFHGP图片预览
型号: M306NNFHGP
PDF下载: 下载PDF文件 查看货源
内容描述: 瑞萨MCU [Renesas MCU]
分类和应用: 微控制器和处理器外围集成电路时钟
文件页数/大小: 70 页 / 529 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Under development
This document is under development and its contents are subject to change.
M16C/6N Group (M16C/6NL, M16C/6NN)
1. Overview
1.2 Performance Overview
Tables 1.1 and 1.2 list the Functions and Specifications for M16C/6N Group (M16C/6NL, M16C/6NN).
Table 1.1 Functions and Specifications for M16C/6N Group (100-pin Version: M16C/6NL)
Item
Specification
CPU
91 instructions
Number of fundamental
instructions
Minimum instruction execution time 41.7ns (f(BCLK) = 24 MHz, 1/1 prescaler, without software wait)
Single-chip, memory expansion and microprocessor modes
Operating mode
Address space
1 Mbyte
Memory capacity
Refer to
Table 1.3 Product Information
Peripheral
Ports
Input/Output: 87 pins, Input: 1 pin
Function
Timer A: 16 bits
5 channels
Multifunction timers
Timer B: 16 bits
6 channels
Three-phase motor control circuit
3 channels
Serial interfaces
Clock synchronous, UART, I
2
C-bus
(1)
, IEBus
(2)
2 channels
Clock synchronous
A/D converter
10-bit A/D converter: 1 circuit, 26 channels
D/A converter
8 bits
2 channels
DMAC
2 channels
CRC calculation circuit
CRC-CCITT
CAN module
1 channel with 2.0B specification
Watchdog timer
15 bits
1 channel (with prescaler)
Interrupts
Internal: 30 sources, External: 9 sources
Software: 4 sources, Priority levels: 7 levels
4 circuits
Clock generation circuits
• Main clock oscillation circuit (*)
• Sub clock oscillation circuit (*)
• On-chip oscillator
• PLL frequency synthesizer
(*) Equipped with on-chip feedback resistor
Oscillation-stopped detector Main clock oscillation stop and re-oscillation detection function
Electrical
Supply voltage
VCC = 3.0 to 5.5 V
Characteristics
(f(BCLK) = 24 MHz, 1/1 prescaler, without software wait)
Consumption Mask ROM 19mA (f(BCLK) = 24 MHz, PLL operation, no division)
Flash memory 21mA (f(BCLK) = 24 MHz, PLL operation, no division)
current
Mask ROM 3µA (f(BCLK) = 32 kHz, Wait mode, Oscillation capacity Low)
Flash memory 0.8µA (Stop mode, Topr = 25°C)
Flash Memory Programming and erasure voltage 3.3 ± 0.3 V or 5.0 ± 0.5 V
Version
Programming and erasure endurance 100 times
I/O
5.0 V
I/O withstand voltage
Characteristics Output current
5m A
Operating Ambient Temperature
-40 to 85°C
Device Configuration
CMOS high-performance silicon gate
Package
100-pin molded-plastic LQFP
NOTES:
1. I
2
C-bus is a trademark of Koninklijke Philips Electronics N.V.
2. IEBus is a trademark of NEC Electronics Corporation.
Rev.2.10 Aug 25, 2006
REJ03B0061-0210
page 2 of 67