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X28HC256JM-90 参数 Datasheet PDF下载

X28HC256JM-90图片预览
型号: X28HC256JM-90
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗CMOS EEPROM与高速页写能力256K EEPROM [LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 977 K
品牌: ROCHESTER [ Rochester Electronics ]
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X28HC256
Capacitance
SYMBOL
C
I/O
(Note 9)
C
IN
(Note 9)
TA = +25°C, f = 1MHz, V
CC
= 5V.
TEST
Input/output capacitance
Input capacitance
CONDITIONS
V
I/O
= 0V
V
IN
= 0V
MAX
10
6
UNIT
pF
pF
Endurance and Data Retention
PARAMETER
Endurance
Data retention
MIN
1,000,000
100
MAX
UNIT
Cycles
Years
AC Conditions of Test
Input pulse levels
Input rise and fall times
Input and output timing levels
0V to 3V
5ns
1.5V
Symbol Table
WAVEFORM
INPUTS
Must be
steady
May change
from LOW
to HIGH
May change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
N/A
OUTPUTS
Will be
steady
Will change
from LOW
to HIGH
Will change
from HIGH
to LOW
Changing:
State Not
Known
Center Line
is High
Impedance
Mode Selection
CE
L
L
H
X
X
OE
L
H
X
L
X
WE
H
L
X
X
H
MODE
Read
Write
Standby and write
inhibit
Write inhibit
Write inhibit
I/O
D
OUT
D
IN
High Z
POWER
active
active
standby
Equivalent AC Load Circuit
5V
1.92kΩ
OUTPUT
1.37kΩ
30pF
11
FN8108.2
May 7, 2007