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X28HC256JM-90 参数 Datasheet PDF下载

X28HC256JM-90图片预览
型号: X28HC256JM-90
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗CMOS EEPROM与高速页写能力256K EEPROM [LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 977 K
品牌: ROCHESTER [ Rochester Electronics ]
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X28HC256  
Write Cycle Limits  
TYP  
PARAMETER  
SYMBOL  
MIN  
(Note 6)  
MAX  
UNIT  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
ns  
ns  
µs  
µs  
Write Cycle Time  
Address Setup Time  
Address Hold Time  
Write Setup Time  
Write Hold Time  
tWC (Note 7)  
3
5
tAS  
tAH  
0
50  
0
tCS  
tCH  
0
CE Pulse Width  
tCW  
50  
0
OE HIGH Setup Time  
OE HIGH Hold Time  
WE Pulse Width  
tOES  
tOEH  
tWP  
0
50  
50  
WE HIGH Recovery (page write only)  
tWPH (Note 8)  
tDV  
Data Valid  
1
Data Setup  
tDS  
50  
0
Data Hold  
tDH  
Delay to Next Write After Polling is True  
Byte Load Cycle  
t
DW (Note 8)  
tBLC  
10  
0.15  
100  
NOTES:  
6. Typical values are for TA = +25°C and nominal supply voltage.  
7. tWC is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device  
requires to automatically complete the internal write operation.  
8. tWPH and tDW are periodically sampled and not 100% tested.  
WE Controlled Write Cycle  
t
WC  
ADDRESS  
t
t
AH  
AS  
t
t
CS  
CH  
CE  
OE  
t
t
OEH  
OES  
t
WP  
WE  
DATA IN  
DATA OUT  
DATA VALID  
HIGH Z  
t
t
DH  
DS  
FN8108.2  
May 7, 2007  
13